### P ### ure Mo Substrate for LED Epitaxial Wafer
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Description
Specifications:
材质 Composition |
Mo: >99.95 wt% | |||
Item | 2 inch | 4 inch | 5 inch | 6 inch |
直徑 Diameter (mm) |
50.8 mm 2 inch |
101.6 mm 4 inch |
127 mm 5 inch |
152.4 mm 6 inch |
厚度 Thickness (μm) |
100~200±10 | 100~200 ± 10 | 100~200 ± 10 | 100~200 ± 10 |
供货状态 Delivery State |
退火态; Annealed | |||
表面状态 Surface State |
轧制表面, 类镜面,磨光表面,电镀表面,(按照客户要求). Rolled surface, like mirror surface, grinding surface,plating surface. (according to the buyer's required) |
|||
表面粗糙度 Surface roughness, Ra (μm) |
0.04~0.1 | |||
平面度 Flatness (μm) |
20~50 | 50~80 | 80~100 | 100~150 |
TTV Total Thickness Variation(μm) |
2~10 | |||
密度 Density (g/cm3) |
10.18~10.20 | |||
相对密度 Relative Density %TD |
>99.9% | |||
热膨胀系数 Coefficient of Thrmal Expansion(10-6/K) | 5.2 | |||
热导率 Thermal Conductivity (W/mK) |
135 | |||
比热容 Specific Heat Capacity (J/kgK) |
250 | |||
维氏硬度 Vickers Hardness (HV10) |
240~350 |
Heat Sinks Advantages
- High thermal conductivity
- Excellent hermeticity
- Excellent flatness, surface finish, and size control
- Semi-finished or finished (Ni/Au plated) products available
Normal Wafer | |
Finishing Wafer | |
Wafer, Ni/Au plated |
|
2" Wafer package: | |
4" Wafer package: |
Contact the seller
### P ### ure Mo Substrate for LED Epitaxial Wafer
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