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### P ### ure Mo Substrate for LED Epitaxial Wafer buy in Shanghai
Buy ### P ### ure Mo Substrate for LED Epitaxial Wafer
### P ### ure Mo Substrate for LED Epitaxial Wafer

### P ### ure Mo Substrate for LED Epitaxial Wafer

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In stock
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China, Shanghai
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Description

Specifications:

材质
Composition
Mo: >99.95 wt%
Item 2 inch 4 inch 5 inch 6 inch
直徑
Diameter (mm)
50.8 mm
2 inch
101.6 mm
4 inch
127 mm
5 inch
152.4 mm
6 inch
厚度
Thickness (μm)
100~200±10 100~200 ± 10 100~200 ± 10 100~200 ± 10
供货状态
Delivery State
退火态; Annealed
表面状态
Surface State
轧制表面, 类镜面,磨光表面,电镀表面,(按照客户要求).
Rolled surface, like mirror surface, grinding surface,plating surface. (according to the buyer's required)
表面粗糙度
Surface roughness, Ra (μm)
0.040.1
平面度
Flatness (μm)
2050 50~80 80~100 100~150
TTV
Total Thickness Variation(μm)
210
密度
Density (g/cm3)
10.18~10.20
相对密度
Relative Density %TD
>99.9%
热膨胀系数 Coefficient of Thrmal Expansion(10-6/K) 5.2
热导率
Thermal Conductivity (W/mK)
135
比热容
Specific Heat Capacity (J/kgK)
250
维氏硬度
Vickers Hardness (HV10)
240~350
 

Heat Sinks Advantages

- High thermal conductivity

- Excellent hermeticity

- Excellent flatness, surface finish, and size control

- Semi-finished or finished (Ni/Au plated) products available

Normal Wafer
Finishing Wafer

Wafer, Ni/Au plated

2" Wafer package:
4" Wafer package:
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### P ### ure Mo Substrate for LED Epitaxial Wafer
### P ### ure Mo Substrate for LED Epitaxial Wafer
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